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BFR93AR
NPN 6 GHz wideband transistor
Rev. 01 -- 30 November 2006 Product data sheet
1. Product profile
1.1 General description
NPN wideband transistor in a plastic SOT23 package. PNP complement: BFT93.
1.2 Features
I Very high power gain I Low noise figure I Very low intermodulation distortion
1.3 Applications
I RF wideband amplifiers and oscillators
1.4 Quick reference data
Table 1. VCBO VCEO IC Ptot Cre fT GUM Quick reference data Conditions open emitter Min Tsp 95 C IC = 0 mA; VCE = 5 V; f = 1 MHz; IC = 30 mA; VCE = 5 V; f = 500 MHz; IC = 30 mA; VCE = 8 V; Tamb = 25 C f = 1 GHz f = 2 GHz NF VO noise figure output voltage IC = 5 mA; VCE = 8 V; f = 1 GHz; S = opt; Tamb = 25 C IMD = -60 dB; IC = 30 mA; VCE = 8 V; RL = 75 ; Tamb = 25 C; fp + fq - fr = 793.25 MHz 13 7 1.9 425 dB dB dB mV Typ 0.6 6 Max 15 12 35 300 Unit V V mA mW pF GHz collector-base voltage collector current total power dissipation feedback capacitance transition frequency unilateral power gain Symbol Parameter
collector-emitter voltage open base
NXP Semiconductors
BFR93AR
NPN 6 GHz wideband transistor
2. Pinning information
Table 2. Pin 1 2 3 Pinning Description emitter base collector
1 2 3 3 2 1
sym026
Simplified outline
Symbol
3. Ordering information
Table 3. Ordering information Package Name BFR93AR Description plastic surface-mounted package; 3 leads Version SOT23 Type number
4. Marking
Table 4. BFR93AR Marking Marking code *R5 Description * = p : made in Hong Kong * = w : made in China Type number
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC Ptot Tstg Tj
[1]
Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current total power dissipation storage temperature junction temperature
Conditions open emitter open base open collector Tsp 95 C; see Figure 2
[1]
Min -65 -
Max 15 12 2 35 300 +150 +175
Unit V V V mA mW C C
Tsp is the temperature at the solder point of the collector pin.
BFR93AR_1
(c) NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 30 November 2006
2 of 13
NXP Semiconductors
BFR93AR
NPN 6 GHz wideband transistor
6. Thermal characteristics
Table 6. Symbol Rth(j-sp)
[1]
Thermal characteristics Parameter thermal resistance from junction to solder point Conditions Tsp 95 C
[1]
Typ 260
Unit K/W
Tsp is the temperature at the solder point of the collector pin.
7. Characteristics
Table 7. Symbol ICBO hFE Cc Ce Cre fT GUM Characteristics Parameter collector-base cut-off current DC current gain collector capacitance emitter capacitance feedback capacitance transition frequency unilateral power gain Conditions IE = 0 A; VCB = 5 V IC = 30 mA; VCE = 5 V; see Figure 3 IE = ie = 0 A; VCB = 5 V; f = 1 MHz; see Figure 4 IC = ic = 0 A; VEB = 0.5 V; f = 1 MHz IC = ic = 0 A; VCE = 5 V; f = 1 MHz; Tamb = 25 C IC = 30 mA; VCE = 5 V; f = 500 MHz; see Figure 5 IC = 30 mA; VCE = 8 V; Tamb = 25 C; see Figure 6 to Figure 9 f = 1 GHz f = 2 GHz NF noise figure IC = 5 mA; VCE = 8 V; S = opt; Tamb = 25 C; see Figure 12 and Figure 13 f = 1 GHz f = 2 GHz VO IMD2 output voltage second-order intermodulation distortion see Figure 15
[2][3] [2][4] [1]
Min 40 4.5
Typ 90 0.7 1.9 0.6 6
Max 50 -
Unit nA pF pF pF GHz
-
13 7
-
dB dB
-
1.9 3 425 -50
-
dB dB mV dB
[1]
GUM is the maximum unilateral power gain, assuming S12 is zero and
S 21 G UM = 10 log ------------------------------------------------------- dB. 2 2 ( 1 - S 11 ) ( 1 - S 22 )
[2] [3] Measured on the same crystal in a SOT37 package (BFR91A). IMD = -60 dB (DIN 45004B); IC = 30 mA; VCE = 8 V; RL = 75 ; Tamb = 25 C; Vp = VO at IMD = -60 dB; fp = 795.25 MHz; Vq = VO -6 dB at fq = 803.25 MHz; Vr = VO -6 dB at fr = 805.25 MHz; measured at fp + fq - fr = 793.25 MHz [4] IC = 30 mA; VCE = 8 V; RL = 75 ; Tamb = 25 C; Vp = 200 mV at fp = 250 MHz; Vq = 200 mV at fp = 560 MHz; measured at fp + fq = 810 MHz
(c) NXP B.V. 2006. All rights reserved.
2
BFR93AR_1
Product data sheet
Rev. 01 -- 30 November 2006
3 of 13
NXP Semiconductors
BFR93AR
NPN 6 GHz wideband transistor
1.5 nF
+VBB
1.5 nF L3 10 k L2 1 nF 1 nF L1 1 nF 270
+VCC
75 output
75 input
DUT
3.3 pF
18
0.68 pF
mbb251
L1 = L3 = 5 H choke. L2 = 3 turns 0.4 mm copper wire; winding pitch 1 mm; internal diameter 3 mm.
Fig 1. Intermodulation distortion and second harmonic MATV test circuit
400 Ptot (mW) 300
mra702
120
mcd087
hFE
80
200
40 100
0
0 0 50 100 150 Tsp (C) 200 0 10 20 IC (mA) 30
VCE = 5 V; Tj = 25 C.
Fig 2. Power derating curve
Fig 3. DC current gain as a function of collector current
BFR93AR_1
(c) NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 30 November 2006
4 of 13
NXP Semiconductors
BFR93AR
NPN 6 GHz wideband transistor
1 Cc (pF) 0.8
mbb252
8 fT (GHz) 6
mcd089
0.6 4 0.4
2 0.2
0 0 4 8 12 16 VCB (V)
0 0 10 20 30 IC 40 (mA)
IE = ie = 0 mA; f = 1 MHz; Tj = 25 C.
VCE = 2 V; f = 500 MHz; Tj = 25 C.
Fig 4. Collector capacitance as a function of collector-base voltage; typical values
30 gain (dB) MSG 20 GUM
mbb255
Fig 5. Transition frequency as a function of collector current; typical values
mbb256
30 gain (dB) 20
MSG
GUM 10 10
0 0 10 20 30 IC (mA) 40
0
0
10
20
30
IC (mA)
40
VCE = 8 V; f = 500 MHz.
VCE = 8 V; f = 1 GHz.
Fig 6. Gain as a function of collector current; typical values
Fig 7. Gain as a function of collector current; typical values
BFR93AR_1
(c) NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 30 November 2006
5 of 13
NXP Semiconductors
BFR93AR
NPN 6 GHz wideband transistor
50 gain (dB) 40 GUM
mbb257
50 gain (dB) 40 GUM
mbb258
30 MSG 20
30
MSG
20 Gmax
10
Gmax
10
0 10 102 103
4 f (MHz) 10
0 10 102 103 f (MHz) 104
IC = 10 mA; VCE = 8 V.
IC = 30 mA; VCE = 8 V.
Fig 8. Gain as a function of frequency; typical values
40 BS (mS) 20
mbb253
Fig 9. Gain as a function of frequency; typical values
30
mbb254
BS
(mS) 20 3.5 10 1.6 2.0 2.5 3.0 NF = 3.5 dB 0 2.3 2.5 3.0
NF = 4.0 dB
0
-10 -20 -20 -40 -30 0 20 40 60 GS 80 (mS) 0 20 40 GS (mS) 60
IC = 4 mA; VCE = 8 V; f = 800 MHz; Tamb = 25 C.
IC = 4 mA; VCE = 8 V; f = 800 MHz; Tamb = 25 C.
Fig 10. Circles of constant noise figure; typical values
Fig 11. Circles of constant noise figure; typical values
BFR93AR_1
(c) NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 30 November 2006
6 of 13
NXP Semiconductors
BFR93AR
NPN 6 GHz wideband transistor
4 NF (dB) 3
mcd094
4 NF (dB) 3
mcd095
f = 2 GHz
1 GHz 2 500 MHz 2
IC = 30 mA
1
1
10 mA 5 mA
0 1 10 IC (mA)
102
0 102
103
f (MHz)
104
VCE = 8 V.
VCE = 8 V.
Fig 12. Minimum noise figure as a function of collector current; typical values
-40 IMD (dB) -45
mbb263
Fig 13. Minimum noise figure as a function of frequency; typical values
-30 IMD2 (dB) -35
mbb264
-50
-40
-55
-45
-60
-50
-65
0
10
20
30
IC (mA)
40
-55
0
10
20
30
IC (mA)
40
VCE = 8 V; VO = 425 mV (52.6 dBmV); fp + fq - fr = 793.25 MHz; Tamb = 25 C. Measured in MATV test circuit; see Figure 1.
VCE = 8 V; VO = 200 mV (46 dBmV); fp + fq - fr = 810 MHz; Tamb = 25 C. Measured in MATV test circuit; see Figure 1.
Fig 14. Intermodulation distortion; typical values
Fig 15. Second order intermodulation distortion; typical values
BFR93AR_1
(c) NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 30 November 2006
7 of 13
NXP Semiconductors
BFR93AR
NPN 6 GHz wideband transistor
1 0.5 2
0.2 0.5 +j 0 -j 1200 0.2 800 1000 500 200 0.2 1 2 5 10
5 10 10 5
100 MHz
0.5 1
2
mbb259
IC = 30 mA; VCE = 8 V; ZO = 50 ;Tamb = 25 C.
Fig 16. Common emitter input reflection coefficient (S11)
90 120 60
100 150 200 30
500 1000 180 1200 MHz 800 10 20 30 0 - +
150
30
120 90
60
mbb261
IC = 30 mA; VCE = 8 V; Tamb = 25 C.
Fig 17. Common emitter forward transmission coefficient (S21)
BFR93AR_1
(c) NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 30 November 2006
8 of 13
NXP Semiconductors
BFR93AR
NPN 6 GHz wideband transistor
90 120 1200 1000 800 150 500 200 0.05 0.1 0.15 0 - 30 60
100 MHz 180
+
150
30
120 90
60
mbb262
IC = 30 mA; VCE = 8 V; Tamb = 25 C.
Fig 18. Common emitter reverse transmission coefficient (S12)
1 0.5 2
0.2
5 10
+j 0 -j 0.2 0.5 1 2 1000 800 500 200 1200 0.2 100 MHz 5 5 10 10
0.5 1
2
mbb260
IC = 30 mA; VCE = 8 V; ZO = 50 ;Tamb = 25 C.
Fig 19. Common emitter output reflection coefficient (S22)
BFR93AR_1
(c) NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 30 November 2006
9 of 13
NXP Semiconductors
BFR93AR
NPN 6 GHz wideband transistor
8. Package outline
Plastic surface-mounted package; 3 leads SOT23
D
B
E
A
X
HE
vMA
3
Q A A1
1
e1 e bp
2
wMB detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1
OUTLINE VERSION SOT23
REFERENCES IEC JEDEC TO-236AB JEITA
EUROPEAN PROJECTION
ISSUE DATE 04-11-04 06-03-16
Fig 20. Package outline SOT23
BFR93AR_1 (c) NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 30 November 2006
10 of 13
NXP Semiconductors
BFR93AR
NPN 6 GHz wideband transistor
9. Abbreviations
Table 8. Acronym NPN PNP RF MATV Abbreviations Description Negative Positive Negative Positive Negative Positive Radio Frequency Master Antenna Television
10. Revision history
Table 9. Revision history Release date 20061130 Data sheet status Product data sheet Change notice Supersedes Document ID BFR93AR_1
BFR93AR_1
(c) NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 30 November 2006
11 of 13
NXP Semiconductors
BFR93AR
NPN 6 GHz wideband transistor
11. Legal information
11.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
11.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
11.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
12. Contact information
For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com
BFR93AR_1
(c) NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 30 November 2006
12 of 13
NXP Semiconductors
BFR93AR
NPN 6 GHz wideband transistor
13. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2006.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 30 November 2006 Document identifier: BFR93AR_1

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